Infrared Materials Incorporated是(shi)(shi)高性(xing)能硫化(hua)鉛 (PbS) 和(he)硒化(hua)鉛 (PbSe) 紅(hong)(hong)外探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)和(he)陣列組件的(de)制造(zao)商(shang)。紅(hong)(hong)外探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)通常(chang)分(fen)為(wei)熱探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)或光子(zi)(量(liang)子(zi))探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)。硫化(hua)鉛 (PbS) 和(he)硒化(hua)鉛 (PbSe) 探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)都是(shi)(shi)光電(dian)(dian)(dian)導(dao)(dao)紅(hong)(hong)外探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)鉛鹽系列的(de)成員(yuan),它(ta)們在(zai)(zai) 1– 5.5微米(mi)的(de)電(dian)(dian)(dian)磁光譜范圍內敏感。光電(dian)(dian)(dian)導(dao)(dao)探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)是(shi)(shi)薄(bo)膜半導(dao)(dao)體器(qi)(qi)(qi)(qi)(qi)件,當暴露(lu)于不同數(shu)量(liang)的(de)紅(hong)(hong)外輻射時,其電(dian)(dian)(dian)導(dao)(dao)率(lv)會發生變化(hua)。這種變化(hua)導(dao)(dao)致(zhi)流經器(qi)(qi)(qi)(qi)(qi)件的(de)電(dian)(dian)(dian)流量(liang)增加,檢(jian)(jian)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)電(dian)(dian)(dian)路的(de)輸出要么是(shi)(shi)檢(jian)(jian)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)電(dian)(dian)(dian)流的(de)變化(hua),要么是(shi)(shi)負載電(dian)(dian)(dian)阻(zu)上產生的(de)電(dian)(dian)(dian)壓變化(hua)。與在(zai)(zai)相同波(bo)長(chang)區域使(shi)用(yong)的(de)其他檢(jian)(jian)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)相比,PbS 和(he) PbSe 量(liang)子(zi)探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)器(qi)(qi)(qi)(qi)(qi)具有更高的(de)探(tan)(tan)(tan)(tan)(tan)(tan)測(ce)(ce)能力和(he)在(zai)(zai)室溫(wen)下工作(zuo)的(de)優勢,提供(gong)了一種在(zai)(zai)緊湊封裝中獲(huo)得高性(xing)能的(de)經濟方法。Infrared Materials 提供(gong)許多標準和(he)定制配置,從裸芯片(pian)到采用(yong) TO 型封裝的(de) TE 冷卻組件,以適應(ying)各(ge)種設計目(mu)標、操作(zuo)條(tiao)件和(he)應(ying)用(yong)。
主要產品:
探(tan)測器、硒(xi)化(hua)鉛(qian)探(tan)測器、硫化(hua)鉛(qian)探(tan)測器、紅外(wai)探(tan)測器
主要型號:
B1、B2、B3、B6-8、B10-3