紅(hong)外探測(ce)(ce)(ce)器(qi)(qi)通常分為熱(re)探測(ce)(ce)(ce)器(qi)(qi)或(huo)光(guang)子(zi)(zi)(量子(zi)(zi))探測(ce)(ce)(ce)器(qi)(qi)。硫化(hua)鉛(qian) (PbS) 和(he)硒化(hua)鉛(qian) (PbSe) 探測(ce)(ce)(ce)器(qi)(qi)都是(shi)光(guang)電(dian)(dian)(dian)(dian)導(dao)紅(hong)外探測(ce)(ce)(ce)器(qi)(qi)鉛(qian)鹽(yan)系列的(de)(de)成員,它(ta)們在(zai)(zai)(zai) 1– 5.5微米的(de)(de)電(dian)(dian)(dian)(dian)磁(ci)光(guang)譜范圍(wei)內敏感(gan)。光(guang)電(dian)(dian)(dian)(dian)導(dao)探測(ce)(ce)(ce)器(qi)(qi)是(shi)薄(bo)膜半導(dao)體器(qi)(qi)件(jian),當暴露于不同數量的(de)(de)紅(hong)外輻射時,其電(dian)(dian)(dian)(dian)導(dao)率會(hui)發(fa)生變(bian)(bian)(bian)(bian)化(hua)。這(zhe)種變(bian)(bian)(bian)(bian)化(hua)導(dao)致流經器(qi)(qi)件(jian)的(de)(de)電(dian)(dian)(dian)(dian)流量增加,檢(jian)(jian)測(ce)(ce)(ce)器(qi)(qi)電(dian)(dian)(dian)(dian)路的(de)(de)輸出要(yao)么是(shi)檢(jian)(jian)測(ce)(ce)(ce)器(qi)(qi)電(dian)(dian)(dian)(dian)流的(de)(de)變(bian)(bian)(bian)(bian)化(hua),要(yao)么是(shi)負載電(dian)(dian)(dian)(dian)阻上產(chan)生的(de)(de)電(dian)(dian)(dian)(dian)壓(ya)變(bian)(bian)(bian)(bian)化(hua)。與在(zai)(zai)(zai)相同波長區域使用(yong)的(de)(de)其他(ta)檢(jian)(jian)測(ce)(ce)(ce)器(qi)(qi)相比,PbS 和(he) PbSe 量子(zi)(zi)探測(ce)(ce)(ce)器(qi)(qi)具有更(geng)高(gao)(gao)的(de)(de)探測(ce)(ce)(ce)能(neng)(neng)力和(he)在(zai)(zai)(zai)室溫下(xia)工作(zuo)的(de)(de)優勢,提供了一種在(zai)(zai)(zai)緊湊封裝(zhuang)中獲得高(gao)(gao)性(xing)能(neng)(neng)的(de)(de)經濟方法(fa)。
產地:美國
元件(jian)尺寸(cun):1 x 1 mm
響應性(lpk,1050):min.126,000 v/w,typ.190,000 v/w
環境溫度:+25°C
典型冷卻(que)器(qi)功率(處于或ZUI大接近冷卻(que)時):1.8V@1.2A
工作(zuo)溫(wen)度:-50°C
標準(zhun)包裝選項(xiang):TO-66, TO-8
響(xiang)應(ying)波長:max.4.5µm
D(λpk,1050 Hz,1 Hz):3.5 x 1010 cm Hz/ w-1
元件電阻(zu)(暗(an)):1.0…20 MegOhm
時(shi)間常數(通常不測量(liang)):12µsec
額定元件(jian)溫度:+85°C